Non volatile photo-switch using a diamond pn junction
| Autor: | Cédric Masante, Martin Kah, Clément Hébert, Nicolas Rouger, Julien Pernot |
|---|---|
| Přispěvatelé: | Semi-conducteurs à large bande interdite (SC2G), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), [GIN] Grenoble Institut des Neurosciences (GIN), Institut National de la Santé et de la Recherche Médicale (INSERM)-Université Grenoble Alpes (UGA), Convertisseurs Statiques (LAPLACE-CS), LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées |
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
FOS: Physical sciences 02 engineering and technology Applied Physics (physics.app-ph) engineering.material 7. Clean energy 01 natural sciences law.invention Depletion region law Power electronics 0103 physical sciences Energy transformation [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Quantum information science 010302 applied physics business.industry Transistor [SPI.NRJ]Engineering Sciences [physics]/Electric power Diamond Physics - Applied Physics 021001 nanoscience & nanotechnology Electronic Optical and Magnetic Materials Semiconductor engineering [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] Optoelectronics 0210 nano-technology p–n junction business |
| Zdroj: | Advanced Electronic Materials Advanced Electronic Materials, Wiley, 2021, pp.2100542. ⟨10.1002/aelm.202100542⟩ |
| ISSN: | 2199-160X |
| DOI: | 10.1002/aelm.202100542⟩ |
| Popis: | International audience; Ultrawide bandgap semiconductor technologies offer potentially revolutionary advances in the rapidly developing areas of quantum communication, short wavelength optics, smart energy conversion and biomedical interfaces. These strongly demanding technologies can be partly constructed using conventional devices but new hybrid architectures are needed to overpass current performances and add functionalities. Here, we propose a new concept based on the specific properties of a diamond pn junction combined with both an electric and optical control of the depletion region. Using this junction as a gate in a junction field effect transistor, we report a proof of concept of a non volatile diamond photo-switch. A diamond pn junction made with nitrogen deep donors in the n?side is demonstrated to be optically activated thanks to visible light. The n-type diamond gate is almost devoid of free carriers in the dark and thus insulating. Illuminating the device renders the standard electrical gate control of the transistor efficient. Without illumination, the device is frozen, keeping a permanent memory of the current state. This new way of operating the device opens numerous possibilities to store and transfer information or energy with applications in the field of electrical aircraft or aerospace electronics, power electronics, bio-electronics and quantum communication. |
| Databáze: | OpenAIRE |
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