Di-Carbon defects in annealed highly carbon doped GaAs
| Autor: | Christopher D. Latham, S.P. Westwater, B. R. Davidson, R.C. Newman, Sven Öberg, R. Jones, J. Wagner, Tim J. Bullough, T.B. Joyce |
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| Přispěvatelé: | Publica |
| Jazyk: | angličtina |
| Rok vydání: | 1997 |
| Předmět: |
Materials science
Annealing (metallurgy) Beräkningsmatematik Ab initio theory arsenides General Physics and Astronomy Trapping doping semiconductors symbols.namesake raman spectroscopy Naturvetenskap - Fysik Carbon doped III-V Kohlenstoffdotierung density functional theory Scattering diffusion GaAs Natural sciences - Physics Acceptor Teknisk materialvetenskap - Funktionella material Crystallography Ramanspektroskopie Computational Mathematics Materials science - Functional materials Raman spectroscopy symbols Atomic physics carbon doping |
| Popis: | Formation of bonded dicarbon C-C centers is deduced from the observation of Raman lines at 1742, 1708, and 1674 cm -1 in GaAs codoped with 12C and 13C after annealing at 850 °C with concomitant loss of vibrational scattering from CAs. The frequencies agree with results of ab initio theory for a C-C split interstitial (deep donor) formed by the trapping of a mobile interstitial C (displaced CAs) atom by an undisplaced CAs acceptor. Other mechanisms of carrier loss are inferred since a weaker Raman triplet is detected at 1859, 1824, and 1788 cm -1 from a different C-C complex. Godkänd; 1997; 20080429 (ysko) |
| Databáze: | OpenAIRE |
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