| Autor: |
Shimawaki, Hidenori, Miyamoto, Hironobu |
| Rok vydání: |
2005 |
| Předmět: |
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| Zdroj: |
Shimawaki, Hidenori ; Miyamoto, Hironobu (2005) GaN-based FETs for microwave high-power applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi. |
| DOI: |
10.6092/unibo/amsacta/1751 |
| Popis: |
The present status of GaN-based FETs has been described with a focus on microwave high-power performance. Our latest developments of the devices are presented, and the device and amplifier performance is reported. This includes the demonstration of a 230-W CW output power at 2 GHz, a 156-W pulsed output power at 4 GHz, and a 5.8-W CW output power at 30 GHz. The results confirmed excellent potential of the GaN-based FETs especially for high-voltage, high-power applications at microwave and millimeter-wave frequencies. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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