High responsivity GaNAsSb p-i-n photodetectors at 1.3 µm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy
| Autor: | Andreas Stohr, Jean Chazelas, Kian Hua Tan, K. L. Lew, Mario Weiß, S. Fedderwitz, T. K. Ng, Dieter Jäger, S.F. Yoon, Elhadj Dogheche, N. Saadsaoud, Wan Khai Loke, Didier Decoster, Satrio Wicaksono |
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| Přispěvatelé: | Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF) |
| Jazyk: | angličtina |
| Rok vydání: | 2008 |
| Předmět: |
Hot Temperature
Materials science Nitrogen Radio Waves Transducers Photodetector chemistry.chemical_element Gallium 02 engineering and technology 01 natural sciences Arsenicals law.invention Photometry Responsivity Antimony law 0103 physical sciences Elektrotechnik 010302 applied physics business.industry 021001 nanoscience & nanotechnology Atomic and Molecular Physics and Optics Photodiode Semiconductor Semiconductors chemistry Attenuation coefficient Physical vapor deposition Optoelectronics Crystallization 0210 nano-technology business Molecular beam epitaxy |
| Zdroj: | Optics Express Optics Express, Optical Society of America-OSA Publishing, 2008, 16, pp.7720-7725. ⟨10.1364/OE.16.007720⟩ Optics Express, 2008, 16, pp.7720-7725. ⟨10.1364/OE.16.007720⟩ |
| ISSN: | 1094-4087 |
| DOI: | 10.1364/OE.16.007720⟩ |
| Popis: | GaNAsSb/GaAs p-i-n photo notdetectors with an intrinsic GaNAsSb photoabsorption layer grown at 350 degrees C, 400 degrees C, 440 degrees C and 480 degrees C, have been prepared using radio-frequency nitrogen plasma-assisted molecular beam epitaxy in conjunction with a valved antimony cracker source. The i-GaNAsSb photoabsorption layer contains 3.3% of nitrogen and 8% of antimony, resulting in DC photo-response up to wavelengths of 1350 nm. The device with i-GaNAsSb layer grown at 350 degrees C exhibits extremely high photoresponsivity of 12A/W at 1.3 microm. These photodetectors show characteristics which strongly suggest the presence of carrier avalanche process at reverse bias less than 5V. |
| Databáze: | OpenAIRE |
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