Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas
| Autor: | C. Chassat, Jérôme Saint-Martin, Arnaud Bournel, Philippe Dollfus, Florian Monsef |
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| Přispěvatelé: | Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2006 |
| Předmět: |
Materials science
Monte Carlo method Silicon on insulator 02 engineering and technology 01 natural sciences law.invention Quantization (physics) law 0103 physical sciences MOSFET Materials Chemistry [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Electrical and Electronic Engineering 010302 applied physics Computer simulation business.industry Transistor 021001 nanoscience & nanotechnology Condensed Matter Physics [SPI.TRON]Engineering Sciences [physics]/Electronics Electronic Optical and Magnetic Materials CMOS Optoelectronics 0210 nano-technology business Fermi gas |
| Zdroj: | Semiconductor Science and Technology Semiconductor Science and Technology, IOP Publishing, 2006, 21 (4), pp.L29-L31. ⟨10.1088/0268-1242/21/4/L01⟩ |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/21/4/l01 |
| Popis: | International audience; A new two-dimensional self-consistent Monte Carlo simulator including multi sub-band transport in 2D electron gas is described and applied to thin-film SOI double gate MOSFETs. This approach takes into account both out of equilibrium transport and quantization effects. Our method allows us to significantly improve microscopic insight into the operation of deep sub-100 nm CMOS devices. We compare and analyse the results obtained with and without quantization effects for a 15 nm long DGMOS transistor. |
| Databáze: | OpenAIRE |
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