Scanning tunneling microscopy reveals LiMnAs is a room temperature anti-ferromagnetic semiconductor
| Autor: | A. P. Wijnheijmer, Václav Holý, Tomas Jungwirth, Václav Novák, Xavier Marti, M. Cukr, PM Paul Koenraad |
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| Přispěvatelé: | Photonics and Semiconductor Nanophysics, Semiconductor Nanostructures and Impurities |
| Jazyk: | angličtina |
| Rok vydání: | 2012 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Condensed matter physics business.industry Band gap 02 engineering and technology Magnetic semiconductor 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences law.invention Semiconductor law 0103 physical sciences Microscopy Thin film Scanning tunneling microscope 010306 general physics 0210 nano-technology business Molecular beam epitaxy |
| Zdroj: | Applied Physics Letters, 100(11):112107, 112107-1/4. American Institute of Physics Applied Physics Letters |
| ISSN: | 1077-3118 0003-6951 |
| Popis: | We performed scanning tunneling microscopy and spectroscopy on a LiMnAs(001) thin film epitaxially grown on an InAs(001) substrate by molecular beam epitaxy. While the in situ cleavage exposed only the InAs(110) non-polar planes, the cleavage continued into the LiMnAs thin layer across several facets. We combined both topography and current mappings to confirm that the facets correspond to LiMnAs. By spectroscopy we show that LiMnAs has a band gap. The band gap evidenced in this study, combined with the known Ne´el temperature well above room temperature, confirms that LiMnAs is a promising candidate for exploring the concepts of high temperature semiconductor spintronics based on antiferromagnets. |
| Databáze: | OpenAIRE |
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