Erratum: 'Optical properties of nearly stacking-fault-free m-plane GaN homoepitaxial films grown by metal organic vapor phase epitaxy on low defect density free-standing GaN substrates' [Appl. Phys. Lett. 92, 091912 (2008)]

Autor:	Masashi Kubota, Hiromu Yamaguchi, L. Zhao, Shigefusa F. Chichibu, Kuniyoshi Okamoto, Hiroaki Ohta
Rok vydání:	2008
Předmět:	Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Inorganic chemistry Chemical vapor deposition Combustion chemical vapor deposition Epitaxy Metal Phase (matter) visual_art visual_art.visual_art_medium Metalorganic vapour phase epitaxy Thin film Stacking fault
Zdroj:	Applied Physics Letters. 93:129901
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.2991440
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c063b6c6488498943f809fa50c1f9985 https://doi.org/10.1063/1.2991440 Zobrazit plný text záznamu