Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy
| Autor: | L. Ravikiran, M. Agrawal, Yuanjin Zheng, Giri Sadasivam Karthikeyan, K. Radhakrishnan, Nethaji Dharmarasu |
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| Přispěvatelé: | School of Electrical and Electronic Engineering, Temasek Laboratories |
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
III-V semiconductors Materials science business.industry Wide-bandgap semiconductor Nucleation General Physics and Astronomy Heterojunction 02 engineering and technology Substrate (electronics) High-electron-mobility transistor 021001 nanoscience & nanotechnology 01 natural sciences lcsh:QC1-999 Stress (mechanics) 0103 physical sciences Interface structure Optoelectronics 0210 nano-technology business Layer (electronics) lcsh:Physics Molecular beam epitaxy |
| Zdroj: | AIP Advances, Vol 7, Iss 1, Pp 015022-015022-11 (2017) |
| ISSN: | 2158-3226 |
| DOI: | 10.1063/1.4974074 |
| Popis: | The stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy (PA-MBE) has been studied. AlN nucleation layer and GaN layer were grown as a function of III/V ratio. GaN/AlN structure is found to form buried cracks when AlN is grown in the intermediate growth regime(III/V∼1)and GaN is grown under N-rich growth regime (III/V |
| Databáze: | OpenAIRE |
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