High-K dielectric deposition in 3D architectures: The case of Ta2O5 deposited with metal-organic precursor TBTDET
| Autor: | J.-C. Giraudin, A. Bajolet, Y. Bréchet, F. Volpi, Mickael Gros-Jean, L. Pinzelli |
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| Přispěvatelé: | Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2007 |
| Předmět: |
Materials science
020209 energy Nanotechnology 02 engineering and technology Dielectric law.invention Metal law 0202 electrical engineering electronic engineering information engineering Microelectronics [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering Metalorganic vapour phase epitaxy Electrical and Electronic Engineering Safety Risk Reliability and Quality Deposition (law) High-κ dielectric business.industry [CHIM.MATE]Chemical Sciences/Material chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Capacitor visual_art Trench visual_art.visual_art_medium Optoelectronics 0210 nano-technology business |
| Zdroj: | Microelectronics Reliability Microelectronics Reliability, Elsevier, 2007, 47 (4-5), pp.700-703 |
| ISSN: | 0026-2714 |
| Popis: | New applications in microelectronics need the integration of high capacitance devices. One way of this development is the integration of capacitors with 3D architecture such as trench fields. The challenge is then to deposit the dielectric material in a highly conformal way within trenches showing high aspects ratios. We have studied and modeled the conformality and the loading effect of Ta 2 O 5 deposited by MOCVD in an analytical way. |
| Databáze: | OpenAIRE |
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