Sponge-like and columnar porous silicon implanted with nitrogen by plasma immersion ion implantation (PIII)
| Autor: | Antonio Fernando Beloto, A. Ferreira da Silva, Mario Ueda, M. D. da Silva, H. Reuther, Carlos Kuranaga, Iuri Muniz Pepe, J. R. Senna, Eduardo Abramof |
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| Rok vydání: | 2002 |
| Předmět: |
Photoluminescence
Materials science genetic structures Anodizing technology industry and agriculture Analytical chemistry Surfaces and Interfaces General Chemistry equipment and supplies Condensed Matter Physics medicine.disease_cause Porous silicon complex mixtures digestive system Plasma-immersion ion implantation Surfaces Coatings and Films Monocrystalline silicon chemistry.chemical_compound Hydrofluoric acid chemistry Materials Chemistry medicine Wafer Ultraviolet |
| Zdroj: | Surface and Coatings Technology 156 (2002) 267-271 |
| ISSN: | 0257-8972 |
| DOI: | 10.1016/s0257-8972(02)00106-8 |
| Popis: | Sponge-like and columnar porous silicon (PS) were prepared from p- and n-type (100) monocrystalline silicon wafers using different anodization conditions (hydrofluoric acid concentration, current density and anodization time) and then implanted with nitrogen by plasma immersion ion implantation (PIII). The effect of the implantation and of the compounds formed was analyzed by measuring the reflectance of the implanted samples for wavelengths between 220 and 800 nm. A reduction in reflectance in the ultraviolet (UV) region of the spectrum was observed for polished Si samples and for all kinds of PS samples. Increased UV-induced photoluminescence in these samples caused by the increase in absorption in the UV region is expected. |
| Databáze: | OpenAIRE |
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