V-Shaped InAs/Al0.5Ga0.5Sb Vertical Tunnel FET on GaAs (001) Substrate With I $_{\text {ON}}=\text {433}\,\,\mu$ A. $\mu$ m $^{-\text {1}}$ at V $_{\text {DS}}= \text {0.5}$ V
| Autor: | Xavier Wallart, Mohammed Zaknoune, David Troadec, Laurence Morgenroth, Christophe Coinon, V.K. Chinni, Ludovic Desplanque |
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| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
Materials science
III-V semiconductors heterojunction InAs/AlGaSb Nanotechnology 02 engineering and technology Substrate (electronics) Epitaxy 01 natural sciences Gallium arsenide chemistry.chemical_compound tunnel FET 0103 physical sciences Electrical and Electronic Engineering Quantum tunnelling 010302 applied physics Condensed matter physics Heterojunction 021001 nanoscience & nanotechnology Tunnel field-effect transistor Subthreshold slope Isotropic etching Electronic Optical and Magnetic Materials chemistry lcsh:Electrical engineering. Electronics. Nuclear engineering 0210 nano-technology lcsh:TK1-9971 Biotechnology |
| Zdroj: | IEEE Journal of the Electron Devices Society, Vol 5, Iss 1, Pp 53-58 (2017) |
| ISSN: | 2168-6734 |
| Popis: | We report on the fabrication of a near broken InAs/Al0.5Ga0.5Sb vertical TUNNEL field effect transistor (TFET). The epitaxial structure is grown on a GaAs (001) substrate thanks to large mismatch accommodation at the GaSb/GaAs interface. The fabrication process involves an anisotropic and selective wet chemical etching of the InAs channel to form a V-shaped mesa with lateral side gates. This new architecture provides a large ON-current at room temperature while enabling an efficient pinch-off thanks to a reduced body thickness near the tunneling interface. With low temperature measurements, we identify the different mechanisms limiting the subthreshold slope at room temperature. At 77 K, where the impact of defects is reduced, a minimum subthreshold slope of 71 mV/decade is achieved for $\text{V}_{\mathrm{ DS}}=0.1$ V with an $\text{I}_{\mathrm{ ON}}/\text{I}_{\mathrm{ OFF}}$ current ratio larger than 6 decades demonstrating that a good trade-off between ON current and switching efficiency could be obtained with a near broken gap heterostructure based n-TFET. |
| Databáze: | OpenAIRE |
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