Indium-Free Fully Transparent Electronics Deposited Entirely by Atomic Layer Deposition
| Autor: | Zhenwei Wang, Husam N. Alshareef, Pradipta K. Nayak |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Materials science
chemistry.chemical_element Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 01 natural sciences law.invention Atomic layer deposition law 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Atomic layer epitaxy General Materials Science Electronics Thin film 010302 applied physics business.industry Mechanical Engineering Transistor Propagation delay 021001 nanoscience & nanotechnology chemistry Mechanics of Materials Thin-film transistor Optoelectronics 0210 nano-technology business Indium |
| Zdroj: | Advanced Materials. 28:7736-7744 |
| ISSN: | 0935-9648 |
| DOI: | 10.1002/adma.201600503 |
| Popis: | Indium-free, fully transparent thin-film transistors are fabricated entirely by the atomic layer deposition technique on rigid and flexible substrates at a low temperature of 160 °C. The transistors show high saturation mobility, large switching ratio, and small subthreshold swing value. The inverters and ring oscillators show large gain value and small propagation delay time, indicating the potential of this process in transparent electronic devices. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Plný text