| Autor: |
Gunnar Landgren, T. Kallstenius, U. Smith, B. Stoltz, Srinivasan Anand |
| Rok vydání: |
2003 |
| Předmět: |
|
| Zdroj: |
Scopus-Elsevier |
| DOI: |
10.1109/iciprm.1999.773636 |
| Popis: |
Zn-Fe interdiffusion is an important issue in InP-based buried heterostructure lasers that utilise Zn for p doping and Fe for the semi-insulating layers. In this work, cross-sectional scanning capacitance microscopy (SCM) is used to characterise these laser structures. The capability of the SCM technique to analyse such complex devices is demonstrated. The SCM images (on as-cleaved samples) show that diffusion of Zn into the semi-insulating layer is significant and extends as far as 0.7 /spl mu/m. Similar values (about 0.5 /spl mu/m) were obtained by atomic force microscopy (AFM) investigations on samples etched with a dopant selective etchant. Further, the SCM images are shown to give additional useful information on the active doping levels in the different layers and the location of the (electrical) p-n junctions. Finally, the mechanisms for the contrast in the SCM images are discussed. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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