| Autor: |
Sambhab Dan, Kuldeep Kargeti, R. C. Sahoo, Shovan Dan, Debarati Pal, Sunil Verma, Sujay Chakravarty, S. K. Panda, S. Patil |
| Rok vydání: |
2022 |
| Předmět: |
|
| DOI: |
10.48550/arxiv.2210.16527 |
| Popis: |
In the present study, we have discussed the up-turn behavior in the resistivity pattern of the topological nodal line semimetal InBi. We argued that such nature could be generalized with a mathematical model, that can be applied to any compounds exhibiting similar behavior. The extremely high magnetoresistance (XMR) has also been explained by the carrier compensation in the compound, estimated from the Hall conductivity. Moreover, from the study of Subhnikov-de Haas (SdH) oscillation and density functional theory (DFT), we obtained the complete three-dimensional (3D) Fermi surface topology of the compound InBi. A detailed understanding of carriers' behavior has been discussed using those studies. We have also unfurled the topology of each electron and hole pocket and its possible modulation with electron and hole doping. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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