Atomic layer deposition of Nb-doped TiO2: Dopant incorporation and effect of annealing
| Autor: | Wilhelmus M. M. Kessels, Wilhelmus J. H. Berghuis, Jimmy Melskens, Marcel A. Verheijen, Bart Macco, Saravana Balaji Basuvalingam |
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| Přispěvatelé: | Plasma & Materials Processing, Atomic scale processing, Processing of low-dimensional nanomaterials, EIRES |
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Resistive touchscreen Materials science Dopant business.industry Annealing (metallurgy) Brookite Doping 02 engineering and technology Surfaces and Interfaces 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Surfaces Coatings and Films Atomic layer deposition Electrical resistivity and conductivity visual_art 0103 physical sciences visual_art.visual_art_medium Optoelectronics 0210 nano-technology business Electrical conductor |
| Zdroj: | Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, 38(2):022408. AVS Science and Technology Society |
| ISSN: | 1520-8559 0734-2101 |
| Popis: | Transparent conductive oxides form an important group of materials that combine high conductivity with high transparency. In this context, the authors designed an atomic layer deposition process for Nb-doped TiO2. The presented process enables accurate control over both the position and concentration of the Nb dopants. The as-deposited films become crystalline (brookite) and low resistive (4.3 × 10−3 Ω cm) upon a postdeposition anneal with temperatures as low as 300 °C. Variations in annealing ambient and temperature yielded resistivity changes over four orders of magnitude and significant changes in the sub-bandgap absorption of light. Next to doping, annealing is therefore shown to be a powerful tool in controlling electrical and optical properties of TiO2:Nb. |
| Databáze: | OpenAIRE |
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