Single-crystalline chromium silicide nanowires and their physical properties
| Autor: | Ping Chen Tsai, Han Fu Hsu, Kuo Chang Lu |
|---|---|
| Rok vydání: | 2015 |
| Předmět: |
Photoluminescence
Materials science Nano Express Magnetism Nanowire Nanochemistry chemistry.chemical_element Nanotechnology Chemical vapor deposition CVD Condensed Matter Physics Field emission Field electron emission Chromium Materials Science(all) Chemical engineering chemistry Chromium silicide nanowires Ferromagnetic property General Materials Science Vapor–liquid–solid method |
| Zdroj: | Nanoscale Research Letters |
| ISSN: | 1556-276X 1931-7573 |
| DOI: | 10.1186/s11671-015-0776-8 |
| Popis: | In this work, chromium disilicide nanowires were synthesized by chemical vapor deposition (CVD) processes on Si (100) substrates with hydrous chromium chloride (CrCl3 · 6H2O) as precursors. Processing parameters, including the temperature of Si (100) substrates and precursors, the gas flow rate, the heating time, and the different flow gas of reactions were varied and studied; additionally, the physical properties of the chromium disilicide nanowires were measured. It was found that single-crystal CrSi2 nanowires with a unique morphology were grown at 700°C, while single-crystal Cr5Si3 nanowires were grown at 750°C in reducing gas atmosphere. The crystal structure and growth direction were identified, and the growth mechanism was proposed as well. This study with magnetism, photoluminescence, and field emission measurements demonstrates that CrSi2 nanowires are attractive choices for future applications in magnetic storage, photovoltaic, and field emitters. |
| Databáze: | OpenAIRE |
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