Extremely large magnetoresistance in the 'ordinary' metal ReO3
| Autor: | Shengnan Zhang, Yuxing Zhou, Huancheng Chen, Shuijin Chen, Zhefeng Lou, Binjie Xu, Oleg V. Yazyev, Jinhu Yang, Jianhua Du, Qin Chen, QuanSheng Wu, Hangdong Wang, Minghu Fang |
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| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Physics
Condensed matter physics Magnetoresistance Strongly Correlated Electrons (cond-mat.str-el) FOS: Physical sciences Fermi surface Electron Cubic crystal system compressibility collapse transition Magnetic field fermi-surface Condensed Matter - Strongly Correlated Electrons Electrical resistivity and conductivity transport Condensed Matter::Strongly Correlated Electrons Electronic band structure Anisotropy |
| Popis: | The extremely large magnetoresistance (XMR) observed in many topologically nontrivial and trivial semimetals has attracted much attention in relation to its underlying physical mechanism. In this paper, by combining the band structure and Fermi surface (FS) calculations with the Hall resistivity and de Haas-Van Alphen (dHvA) oscillation measurements, we studied the anisotropy of magnetoresistance (MR) of ReO$_3$ with a simple cubic structure, an "ordinary" nonmagnetic metal considered previously. We found that ReO$_3$ exhibits almost all the characteristics of XMR semimetals: the nearly quadratic field dependence of MR, a field-induced upturn in resistivity followed by a plateau at low temperatures, high mobilities of charge carriers. It was found that for magnetic field \emph{H} applied along the \emph{c} axis, the MR exhibits an unsaturated \emph{H}$^{1.75}$ dependence, which was argued to arise from the complete carrier compensation supported by the Hall resistivity measurements. For \emph{H} applied along the direction of 15$^\circ$ relative to the \emph{c} axis, an unsaturated \emph{H}$^{1.90}$ dependence of MR up to 9.43~$\times$~$10^3$$\%$ at 10~K and 9~T was observed, which was explained by the existence of electron open orbits extending along the $k_{x}$ direction. Two mechanisms responsible for XMR observed usually in the semimetals occur also in the simple metal ReO$_3$ due to its peculiar FS (two closed electron pockets and one open electron pocket), once again indicating that the details of FS topology are a key factor for the observed XMR in materials. 9 pages, 8 figures. arXiv admin note: text overlap with arXiv:2007.04814 |
| Databáze: | OpenAIRE |
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