Enhanced spin-orbit coupling in core/shell nanowires
Autor: | Bougeard, Dominique, Furthmeier, Stephan, Dirnberger, Florian, Gmitra, Martin, Bayer, Andreas, Forsch, Moritz, Hubmann, Joachim, Schüller, Christian, Reiger, Elisabeth, Fabian, Jaroslav, Korn, Tobias |
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Jazyk: | angličtina |
Rok vydání: | 2016 |
Předmět: |
Condensed Matter::Materials Science
Condensed Matter - Mesoscale and Nanoscale Physics Mesoscale and Nanoscale Physics (cond-mat.mes-hall) ddc:530 FOS: Physical sciences TOPOLOGICAL INSULATORS SEMICONDUCTOR NANOWIRE WURTZITE STRUCTURE MAJORANA FERMIONS SELECTION-RULES GAAS NANOWIRES BAND HETEROSTRUCTURES INTERFACE ELECTRONS 530 Physik Condensed Matter::Mesoscopic Systems and Quantum Hall Effect |
Popis: | The spin-orbit coupling (SOC) in semiconductors is strongly influenced by structural asymmetries, as prominently observed in bulk crystal structures that lack inversion symmetry. Here we study an additional effect on the SOC: the asymmetry induced by the large interface area between a nanowire core and its surrounding shell. Our experiments on purely wurtzite GaAs/AlGaAs core/shell nanowires demonstrate optical spin injection into a single free-standing nanowire and determine the effective electron g-factor of the hexagonal GaAs wurtzite phase. The spin relaxation is highly anisotropic in time-resolved micro-photoluminescence measurements on single nanowires, showing a significant increase of spin relaxation in external magnetic fields. This behaviour is counterintuitive compared with bulk wurtzite crystals. We present a model for the observed electron spin dynamics highlighting the dominant role of the interface-induced SOC in these core/shell nanowires. This enhanced SOC may represent an interesting tuning parameter for the implementation of spin-orbitronic concepts in semiconductor-based structures. |
Databáze: | OpenAIRE |
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