Effect of the annealing process on the microstructure of La2Zr2O7 thin layers epitaxially grown on LaAlO3 by metalorganic decomposition
| Autor: | Carmen Jiménez, François Weiss, P. Odier, T. Caroff, Laetitia Rapenne, S. Morlens, E. Santos |
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| Přispěvatelé: | Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Consortium de Recherches pour l'Emergence des Technologies Avancées (CRETA), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Region Rhone-Alpes Project SESUC, ANR-05-BLAN-0388,MADISUP(2005) |
| Rok vydání: | 2009 |
| Předmět: |
Materials science
Methods of deposition of films and coatings Annealing (metallurgy) Pyrochlore Mineralogy 02 engineering and technology engineering.material Epitaxy 01 natural sciences Inorganic Chemistry chemistry.chemical_compound Lanthanum aluminate 0103 physical sciences Materials Chemistry Transmission electron microscopy (TEM) Composite material Thin film 010306 general physics Nucleation and growth Thin layers Superconducting wires fibers and tapes Film growth and epitaxy [CHIM.MATE]Chemical Sciences/Material chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Microstructure chemistry engineering 0210 nano-technology Single crystal |
| Zdroj: | Journal of Crystal Growth Journal of Crystal Growth, Elsevier, 2009, 311, pp.3204. ⟨10.1016/j.jcrysgro.2009.03.021⟩ |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2009.03.021 |
| Popis: | La2Zr2O7 (LZO) films have been grown by metalorganic decomposition (MOD) to be used as buffer layers for coated conductors. A characteristic feature of LZO thin films deposited by MOD is the formation of nanovoids in an almost single crystal structure of LZO pyrochlore phase. Annealing parameters (heating ramp, temperature, pressure, etc.) were varied to establish their influence on the microstructure of the LZO layers. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were used for sample characterization. The epitaxial pyrochlore phase was obtained for annealing temperatures higher than 850 °C whatever the other annealing conditions. However, the film microstructure, in particular, nanovoids shape and size, is strongly dependent on heating ramp and pressure during annealing. When using low heating ramp, percolation of voids creates diffusion channels for oxygen which are detrimental for the substrate protection during coated conductor fabrication. From this point of view high heating rates are more adapted to the growth of LZO layers. |
| Databáze: | OpenAIRE |
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