Characterization of High-Performance InGaAs QW-MOSFETs With Reliable Bi-Layer HfOxNy Gate Stack
| Autor: | Ho-Young Cha, Su-Keun Eom, Min-Woo Kong, Kwang-Seok Seo |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Passivation 02 engineering and technology Dielectric 01 natural sciences chemistry.chemical_compound 0103 physical sciences MOSFET hafnium oxynitride (HfOxNy) Electrical and Electronic Engineering PBTI reliability Deposition (law) 010302 applied physics business.industry III-V MOSFET Overdrive voltage 021001 nanoscience & nanotechnology Electronic Optical and Magnetic Materials chemistry high-k gate dielectric Logic gate Indium gallium arsenide (InGaAs) Optoelectronics lcsh:Electrical engineering. Electronics. Nuclear engineering 0210 nano-technology business Layer (electronics) lcsh:TK1-9971 Indium gallium arsenide Biotechnology |
| Zdroj: | IEEE Journal of the Electron Devices Society, Vol 7, Pp 908-913 (2019) |
| ISSN: | 2168-6734 |
| Popis: | In this work, we report high-performance InGaAs quantum-well MOSFETs with optimized bi-layer high-k gate dielectrics incorporating high-quality plasma-assisted atomic -layer-deposited (PA-ALD) HfOxNy interfacial layer (IL). With more than 1 nm IL deposition to passivate the InGaAs surface, excellent sub-threshold characteristics (SSmin = 68 mV/dec) were achieved through the proposed gate stack technology. We performed positive-bias-temperature-instability (PBTI) measure -ments in order to ensure a reliable gate operation. The proposed bi-layer III-V gate stack achieved the excellent value of maximum gate overdrive voltage (VOV, max) of 0.49 V with CET = 1.04 nm. The proposed gate stack has a great potential for III-V MOSFET technology to low power logic applications. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|