Kinase detection with gallium nitride based high electron mobility transistors

Autor: Ramon Collazo, Jinqiao Xie, Consuelo Arellano, Isaac Bryan, Albena Ivanisevic, Zlatko Sitar, Matthew S. Makowski
Rok vydání: 2013
Předmět:
Zdroj: Applied Physics Letters. 103:013701
ISSN: 1077-3118
0003-6951
DOI: 10.1063/1.4812987
Popis: A label-free kinase detection system was fabricated by the adsorption of gold nanoparticles functionalized with kinase inhibitor onto AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs were operated near threshold voltage due to the greatest sensitivity in this operational region. The Au NP/HEMT biosensor system electrically detected 1 pM SRC kinase in ionic solutions. These results are pertinent to drug development applications associated with kinase sensing.
Databáze: OpenAIRE