| Autor: |
Takekazu Ishida, Takuya Yoshida, Satoru Noguchi, Hiroaki Shishido, Yutaka Yoneda |
| Rok vydání: |
2015 |
| Předmět: |
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| Zdroj: |
Physics Procedia. 75:405-412 |
| ISSN: |
1875-3892 |
| Popis: |
We grow thin films of SmB6 by molecular beam epitaxy under ultra-high vacuum better than 1×10−6Pa. Sm and B were evaporated independently by Knudsen cells with the deposition rate ratio of B and Sm as B/Sm in between 4.0 and 5.7 on an MgO (100) substrate with the substrate temperature of 1000 ∘C. Reflection high energy electron diffraction patterns show spotted ones indicating a relatively flat film surfaces. This is in good agreement with the surface roughness measured by the atomic force microscope. Interplane and inplane X-ray diffraction measurements represent the preference growth of c-axis oriented SmB4 thin films with the ratio B/Sm = 4.0. We obtained SmB6 thin films with the ratio B/Sm in between 4.9 and 5.7. X-ray diffraction measurements clarify that our SmB6 thin films show evidence of partial epitaxial growth as major domains orienting along [100]SmB6 ∥ [100]MgO. Crystallinity of inplane alignment is improved with approaching the stoichiometric deposition rate of B/Sm = 6. The electrical resistivity increases with decreasing temperature as a semiconductor, and becomes constant at low temperatures. These features well reproduce the tendency observed for the resistivity of bulk samples. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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