Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations
| Autor: | J. Mateos, B. Orfao, M. Samnouni, G.Di Gioia, Diego Moro-Melgar, M. Zaknoune, Beatriz G. Vasallo, Tomas Gonzalez, Susana Perez |
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| Přispěvatelé: | Universidad de Salamanca, Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Departamento de Fisica Aplicada [Salamanca], This work was supported in part by Spanish MINECO and FEDER under Project TEC2017-83910-R and in part by the Junta de Castilla y León and FEDER under Project SA254P18. The work of B. Orfao was supported by the Junta de Castilla y León., Advanced NanOmeter DEvices - IEMN [ANODE - IEMN], Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN] |
| Rok vydání: | 2021 |
| Předmět: |
Permittivity
Materials science Dielectric Passivation 2203 Electrónica Schottky barrier Monte Carlo method Fringing capacitance Edge effects Monte Carlo Schottky Barrier Diodes permittivity dielectric fringing capacitance Edge (geometry) Capacitance Condensed Matter::Materials Science [SPI]Engineering Sciences [physics] Diode [PHYS]Physics [physics] business.industry Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Optoelectronics Schottky barrier diodes business Permitivity |
| Zdroj: | GREDOS. Repositorio Institucional de la Universidad de Salamanca instname 2021 13th Spanish Conference on Electron Devices (CDE) 2021 13th Spanish Conference on Electron Devices (CDE), Jun 2021, Sevilla, Spain. pp.94-97, ⟨10.1109/CDE52135.2021.9455727⟩ |
| Popis: | [EN]Schottky barrier diodes (SBDs) with realistic geometries have been studied by means of a 2-D ensemble Monte Carlo simulator. The non-linearity of the Capacitance-Voltage (C-V) characteristic is the most important parameter for optimizing SBDs as frequency multipliers. In this paper, by changing the values of several technological parameters, we analyze their influence on the edge fringing capacitance in a GaN SBD. We have found that the parameters related with the dielectric used for the passivation and the lateral extension of the epilayer significantly affect the fringing capacitance, thus increasing the value of the total capacitance above the ideal one. Spanish MINECO and FEDER under Project TEC2017-83910-R and Junta de Castilla y León and FEDER under Project SA254P18 |
| Databáze: | OpenAIRE |
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