Effect of Native Oxide on Stress in Silicon Nanowires: Implications for Nanoelectromechanical Systems
| Autor: | Mohammad Nasr Esfahani, Sina Zare Pakzad, Taotao Li, XueFei Li, Zuhal Tasdemir, Nicole Wollschläger, Yusuf Leblebici, B. Erdem Alaca |
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| Přispěvatelé: | Alaca, Burhanettin Erdem (ORCID 0000-0001-5931-8134 & YÖK ID 115108), Pakzad, Sina Zare, Esfahani, Mohammad Nasr, Li, Taotao, Li, XueFei, Tasdemir, Zuhal, Wollschlaeger, Nicole, Leblebici, Yusuf, Koç University Surface Science and Technology Center (KUYTAM) / Koç Üniversitesi Yüzey Teknolojileri Araştırmaları Merkezi (KUYTAM), College of Engineering, Graduate School of Sciences and Engineering, Department of Mechanical Engineering |
| Rok vydání: | 2022 |
| Předmět: |
oxidation
growth diffraction molecular dynamics nanoelectromechanical systems (nems) silicon nanowires raman spectroscopy strain si nanowires intrinsic stress reactive molecular-dynamics native oxide interface Nanoelectromechanical systems (NEMS) Silicon nanowires Native oxide Intrinsic stress Raman spectroscopy Molecular dynamics General Materials Science Nanoscience and nanotechnology Materials science Science and technology |
| Zdroj: | ACS Applied Nano Materials |
| ISSN: | 2574-0970 |
| Popis: | Understanding the origins of intrinsic stress in Si nanowires (NWs) is crucial for their successful utilization as transducer building blocks in next-generation, miniaturized sensors based on nanoelectromechanical systems (NEMS). With their small size leading to ultrahigh-resonance frequencies and extreme surface-to-volume ratios, silicon NWs raise new opportunities regarding sensitivity, precision, and speed in both physical and biochemical sensing. With silicon optoelectromechanical properties strongly dependent on the level of NW intrinsic stress, various studies have been devoted to the measurement of such stresses generated, for example, as a result of harsh fabrication processes. However, due to enormous NW surface area, even the native oxide that is conventionally considered as a benign surface condition can cause significant stresses. To address this issue, a combination of nanomechanical characterization and atomistic simulation approaches is developed. Relying only on low-temperature processes, the fabrication approach yields monolithic NWs with optimum boundary conditions, where NWs and support architecture are etched within the same silicon crystal. Resulting NWs are characterized by transmission electron microscopy and micro-Raman spectroscopy. The interpretation of results is carried out through molecular dynamics simulations with ReaxFF potential facilitating the incorporation of humidity and temperature, thereby providing a close replica of the actual oxidation environment-in contrast to previous dry oxidation or self-limiting thermal oxidation studies. As a result, consensus on significant intrinsic tensile stresses on the order of 100 MPa to 1 GPa was achieved as a function of NW critical dimension and aspect ratio. The understanding developed herein regarding the role of native oxide played in the generation of NW intrinsic stresses is important for the design and development of silicon-based NEMS. Scientific and Technological Research Council of Turkey (TÜBİTAK) |
| Databáze: | OpenAIRE |
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