Lateral association of vertically-coupled quantum dots
| Autor: | Alexandra Suvorova, Mikhail V. Maximov, A. R. Kovsh, P. S. Kop’ev, Zh. I. Alferov, Marius Grundmann, A. F. Tsatsul’nikov, V. M. Ustinov, A. Yu. Egorov, N. A. Bert, I. L. Krestnikov, B. V. Volovik, A. E. Zhukov, Dieter Bimberg, M. V. Belousov, Nikolai N. Ledentsov |
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| Předmět: |
Photoluminescence
Condensed Matter::Other Chemistry business.industry Exciton Physics::Optics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Molecular physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Coupling (electronics) Condensed Matter::Materials Science Optics Quantum dot Rectangular potential barrier Spontaneous emission Electrical and Electronic Engineering business Deposition (law) Molecular beam epitaxy |
| Zdroj: | Scopus-Elsevier |
| Popis: | The structural and optical properties of vertically coupled In 0.5 Ga 0.5 As quantum dots (QDs) in a GaAs matrix with a large number of QD stacks has been studied. We show that for large numbers of QD deposition cycles ( N ), in addition to vertical coupling, lateral coupling effects between the laterally neighboring QDs influence the electronic spectrum of the structure. Lateral coupling of vertically-coupled QDs or even geometrical merging of QDs in the upper rows result in an appearance of a new photoluminescence (PL) line associated with a radiative recombination of excitons via the states of laterally coupled QDs, which dominates the PL spectrum for large N . |
| Databáze: | OpenAIRE |
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