X-ray dosimetry using SAMOS type read only memory
Autor: | Atushi Yoshimura |
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Rok vydání: | 1988 |
Předmět: | |
Zdroj: | RADIOISOTOPES. 37:321-324 |
ISSN: | 1884-4111 0033-8303 |
DOI: | 10.3769/radioisotopes.37.6_321 |
Popis: | An X-ray dosimeter has been investigated with the use of a PROM of a SAMOS (stacked gate avalanche injection type MOS) structure. The SAMOS is employed as a memory IC. The SAMOS is different from a FAMOS (floating gate avalanche injection type MOS) in the presence of a control gate, with the use of this electrode, the analog amount of electrical charge accumulated in the floating gate can be measured. The X-ray dose can be determined by decreasing the amount of electron injected into floating gate by avalanche effect through X-ray irradiation. This dosimeter shows good linearity and flat energy response. The dosimeter has no effect on fading. |
Databáze: | OpenAIRE |
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