Nitrogen-Doped Tungsten Oxide Nanowires: Low-Temperature Synthesis on Si, and Electrical, Optical, and Field-Emission Properties
| Autor: | Li Jen Chou, Yu-Lun Chueh, Mu Tung Chang, Chii-Dong Chen, Lih-Juann Chen, Yann Wen Lan, Yu Chen Lee, Chin Hua Hsieh |
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| Rok vydání: | 2007 |
| Předmět: |
Silicon
Luminescence Photoluminescence Materials science Light Nitrogen Nanowire Metal Nanoparticles Nanotechnology Tungsten Biomaterials Microscopy Electron Transmission X-Ray Diffraction X-ray photoelectron spectroscopy General Materials Science Wafer Vapor–liquid–solid method Nanowires business.industry Doping Electric Conductivity Temperature Oxides General Chemistry Field electron emission Models Chemical Microscopy Electron Scanning Optoelectronics Nanorod business Biotechnology |
| Zdroj: | Small. 3:658-664 |
| ISSN: | 1613-6829 1613-6810 |
| Popis: | Very dense and uniformly distributed nitrogen-doped tungsten oxide (WO(3)) nanowires were synthesized successfully on a 4-inch Si(100) wafer at low temperature. The nanowires were of lengths extending up to 5 mum and diameters ranging from 25 to 35 nm. The highest aspect ratio was estimated to be about 200. An emission peak at 470 nm was found by photoluminescence measurement at room temperature. The suggested growth mechanism of the nanowires is vapor-solid growth, in which gaseous ammonia plays a significant role to reduce the formation temperature. The approach has proved to be a reliable way to produce nitrogen-doped WO(3) nanowires on Si in large quantities. The direct fabrication of WO(3)-based nanodevices on Si has been demonstrated. |
| Databáze: | OpenAIRE |
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