The role of ion characteristics in determining the structural and electrical quality of InN grown by metalorganic molecular beam epitaxy

Autor: P. C. Chow, Stephen J. Pearton, J. van Hove, C. R. Abernathy, S. M. Donovan, J. D. MacKenzie
Rok vydání: 1997
Předmět:
Zdroj: Scopus-Elsevier
ISSN: 1543-186X
0361-5235
DOI: 10.1007/s11664-997-0073-0
Popis: The effects of growth temperature and nitrogen plasma biasing on the electrical and structural properties of InN grown using electron cyclotron resonance metalorganic molecular beam epitaxy (ECR MOMBE) have been investigated. These results are compared to those found from InN grown using a higher energy radio frequency (rf) plasma source (rf MOMBE). By varying the bias of the nitrogen plasma or the growth temperature, it is possible to achieve smooth surface morphologies. However, biasing can also be used to increase the mobility by a factor of two while the growth temperature has only a small effect. By contrast, use of an rf plasma improves mobility by nearly a factor of ten. None of the growth conditions investigated were found to significantly alter the electron concentration, which was measured to be 1−5 × 1020 cm−3.
Databáze: OpenAIRE
Externí odkaz: