A quantum wave based compact modeling approach for the current in ultra-short DG MOSFETs suitable for rapid multi-scale simulations
| Autor: | Fabian Hosenfeld, Alexander Kloes, Fabian Horst, Francois Lime, Benjamin Iniguez |
|---|---|
| Přispěvatelé: | Nanoelectronic and Photonic Systems, Enginyeria Electrònica, Universitat Rovira i Virgili |
| Rok vydání: | 2017 |
| Předmět: |
EKV MOSFET Model
Order effect 02 engineering and technology 01 natural sciences compact model 0103 physical sciences Materials Chemistry Electronic engineering Multi-scale simulation Electrical and Electronic Engineering Device simulation Quantum Enginyeria electrònica Quantum tunnelling Simulació Mètodes de 0038-1101 010302 applied physics Physics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials Non Equilibrium Green's Function (NEGF) Formalism (philosophy of mathematics) Scalability Ingeniería electrónica 0210 nano-technology |
| Zdroj: | Solid-State Electronics |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2017.08.006 |
| Popis: | DOI: 10.1016/j.sse.2017.08.006 URL: https://www-sciencedirect-com.sabidi.urv.cat/science/article/pii/S0038110117303908?via%3Dihub Filiació URV: SI Source-to-drain (SD) tunneling decreases the device performance in MOSFETs falling below the 10 nm channel length. Modeling quantum mechanical effects including SD tunneling has gained more importance specially for compact model developers. The non-equilibrium Green's function (NEGF) has become a state-of-the-art method for nano-scaled device simulation in the past years. In the sense of a multi-scale simulation approach it is necessary to bridge the gap between compact models with their fast and efficient calculation of the device current, and numerical device models which consider quantum effects of nano-scaled devices. In this work, an NEGF based analytical model for nano-scaled double-gate (DG) MOSFETs is introduced. The model consists of a closed-form potential solution of a classical compact model and a 1D NEGF formalism for calculating the device current, taking into account quantum mechanical effects. The potential calculation omits the iterative coupling and allows the straightforward current calculation. The model is based on a ballistic NEGF approach whereby backscattering effects are considered as second order effect in a closed-form. The accuracy and scalability of the non-iterative DG MOSFET model is inspected in comparison with numerical NanoMOS TCAD data for various channel lengths. With the help of this model investigations on short-channel and temperature effects are performed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect