Chemically grafted field effect transistors for the detection of potassium ions
| Autor: | Yves Chevalier, Zoubida Elbhiri, Nicole Jaffrezic-Renault, J.M. Chovelon |
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| Přispěvatelé: | Laboratoire d'Ingénierie et Fonctionnalisation des Surfaces (IFoS), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Matériaux organiques à propriétés spécifiques (LMOPS), Laboratoire d'Electrochimie et de Physico-chimie des Matériaux et des Interfaces (LEPMI ), Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Joseph Fourier - Grenoble 1 (UJF)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Joseph Fourier - Grenoble 1 (UJF)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 1999 |
| Předmět: |
Materials science
Inorganic chemistry Gate insulator 010402 general chemistry Potassium ions 01 natural sciences Ion Polymer chemistry Materials Chemistry Molecule Electrical and Electronic Engineering Instrumentation ComputingMilieux_MISCELLANEOUS Crown ether chemistry.chemical_classification 010405 organic chemistry Metals and Alloys [CHIM.MATE]Chemical Sciences/Material chemistry Condensed Matter Physics Grafting 3. Good health 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials [CHIM.THEO]Chemical Sciences/Theoretical and/or physical chemistry chemistry Field-effect transistor |
| Zdroj: | Sensors and Actuators B: Chemical Sensors and Actuators B: Chemical, Elsevier, 1999, 58 (1-3), pp.491-496. ⟨10.1016/S0925-4005(99)00109-4⟩ |
| ISSN: | 0925-4005 |
| DOI: | 10.1016/s0925-4005(99)00109-4 |
| Popis: | K+-ISFETs are prepared by grafting, on the silica gate insulator surface, silylated crown-ether molecules which were synthesized for the first time. Three grafting reactions were tested. The responses of the grafted ISFETs are sub-nernstian. They are analyzed through the modified site-binding model and the density of grafted sites was found to be equal to 6×1012 cm−2 with the chloro-silylated molecule and 13×1012 cm−2 with the dimethylamino-silylated molecule, the complexation constant of K+ ions being found to be equal to 102.1. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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