Development of a 2'-AlGaN/GaN HEMT technology on sapphire and SiC for mm-wave high-voltage power applications
| Autor: | G. Weimann, Hermann Massler, Stefan Müller, Rudolf Kiefer, Axel Tessmann, F. van Raay, B. Raynor, Michael Mikulla, Klaus Köhler, T. Feltgen, Rudiger Quay, S. Ramberger, J. Schleife |
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| Přispěvatelé: | Publica |
| Jazyk: | angličtina |
| Rok vydání: | 2003 |
| Předmět: |
SiC
Materials science business.industry Aluminium nitride Millimeterwelle Gallium nitride High voltage MODFET High-electron-mobility transistor millimeter wave Mikrowellen-Leistungsverstärker Condensed Matter Physics microwave power amplifier Electronic Optical and Magnetic Materials Power (physics) GaN chemistry.chemical_compound chemistry Ternary compound MMIC Sapphire Optoelectronics business Sheet resistance |
| Popis: | The suitability of AlGaN/GaN HEMTs on SiC is discussed with respect to mm-wave applications at 40 GHz and beyond. A 0.15 μm T-gate AlGaN/GaN-HEMT 2-inch technology on SiC and sapphire was developed for high power applications and for frequencies beyond 30 GHz. Large periphery devices with 0.48 mm gate width show a cw output power of 0.86 W at 40 GHz. AlGaN/GaN dual-gate HEMTs show MSG/MAG of >13 dB at 60 GHz with 0.15 μm gate length. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Databáze: | OpenAIRE |
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