Quantum Transport in Two-Dimensional WS$_2$ with High-Efficiency Carrier Injection Through Indium Alloy Contacts

Autor: Yan Wang, Shi Wun Tong, Zi En Ooi, Lay Kee Ang, Liemao Cao, Manish Chhowalla, Kuan Eng Johnson Goh, Jing Yee Chee, Chit Siong Lau, Yee Sin Ang, Tong Wang
Rok vydání: 2021
Předmět:
DOI: 10.48550/arxiv.2102.02489
Popis: Two-dimensional transition metal dichalcogenides (TMDCs) have properties attractive for optoelectronic and quantum applications. A crucial element for devices is the metal-semiconductor interface. However, high contact resistances have hindered progress. Quantum transport studies are scant as low-quality contacts are intractable at cryogenic temperatures. Here, temperature-dependent transfer length measurements are performed on chemical vapour deposition grown single-layer and bilayer WS$_2$ devices with indium alloy contacts. The devices exhibit low contact resistances and Schottky barrier heights (\sim10 k$\Omega$\si{\micro\metre} at 3 K and 1.7 meV). Efficient carrier injection enables high carrier mobilities ($\sim$190 cm$^2$V$^{-1}$s$^{-1}$) and observation of resonant tunnelling. Density functional theory calculations provide insights into quantum transport and properties of the WS$_2$-indium interface. Our results reveal significant advances towards high-performance WS$_2$ devices using indium alloy contacts.
Comment: 5 Figures
Databáze: OpenAIRE