Effect of electric field non-uniformity on the differences between I-V characteristics of QWIP devices fabricated on the same wafer
| Autor: | Tiago G. Santos, Cristian A. Delfino, Nancy Mieko Abe, A. A. Quivy, G. S. Vieira, F M Fernandes, Roberto Y. Tanaka, Angelo Passaro |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Metals and Alloys Charge (physics) 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy Thermal conduction 01 natural sciences Capacitance Surfaces Coatings and Films Electronic Optical and Magnetic Materials Electric field 0103 physical sciences POÇOS QUÂNTICOS Optoelectronics Wafer Electrical and Electronic Engineering 0210 nano-technology Quantum well infrared photodetector business Instrumentation Voltage |
| Zdroj: | Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual) Universidade de São Paulo (USP) instacron:USP |
| Popis: | Capacitance versus voltage, C–V, measurements are used to identify the origin of the difference between current versus voltage, I–V, characteristics of quantum well infrared photodetector, QWIP, devices fabricated simultaneously on the same wafer, i.e., same epitaxial layers. The devices have similar I–V curves at low bias but differ significantly at higher voltages. It is shown that the charge buildup inside the multiple quantum well structure is responsible for changing the conduction mechanism at voltages lower than that would be expected if the entire structure was subjected to a uniform electric field. This charge buildup varies from device to device, indicating local characteristics dependence. Although a non-uniform electric field is established, as identified by C–V measurements, none of the known fingerprints related to the formation and propagation of electric field domains are present in the I–V curves, i.e., no plateau or negative differential conductivity were observed. |
| Databáze: | OpenAIRE |
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