Comprehensive Microscopic Analysis of Laser-Induced High Doping Regions in Silicon

Autor: D. Suwito, Ulrich Jäger, Wilhelm Warta, Paul Gundel, Martin C. Schubert, Friedemann D. Heinz
Přispěvatelé: Publica
Rok vydání: 2011
Předmět:
inorganic chemicals
Materials science
Silicon
Herstellung und Analyse von hocheffizienten Solarzellen
chemistry.chemical_element
Siliciummaterialcharakterisierung
law.invention
Micrometre
Condensed Matter::Materials Science
symbols.namesake
law
Condensed Matter::Superconductivity
Charakterisierung
Physics::Atomic Physics
Electrical and Electronic Engineering
Spectroscopy
Solarzellen - Entwicklung und Charakterisierung
business.industry
Doping
technology
industry
and agriculture

social sciences
Carrier lifetime
Laser
Electronic
Optical and Magnetic Materials

Characterization (materials science)
Silicium-Photovoltaik
chemistry
symbols
Optoelectronics
lipids (amino acids
peptides
and proteins)

Condensed Matter::Strongly Correlated Electrons
Zellen und Module
business
Raman spectroscopy
Charakterisierung von Prozess- und Silicium-Materialien
human activities
Zdroj: IEEE Transactions on Electron Devices. 58:2874-2877
ISSN: 1557-9646
0018-9383
DOI: 10.1109/ted.2011.2158649
Popis: Microscopic laser-doped regions in advanced solar cell concepts are analyzed to determine the doping density and to identify the damage caused by the laser process. For these investigations, microphotoluminescence spectroscopy and micro-Raman spectroscopy are utilized to measure doping density, internal stress, and carrier lifetime with micrometer resolution. This analysis proves the high applicability of the microspectroscopic techniques for the characterization of laser-doped regions by analyzing the profile of the advanced local doping process and the laser-induced damage particularly at the edges of the highly doped regions.
Databáze: OpenAIRE