Performance comparison of silicon substrates for IC-waveguide integration based on a contactless transition at mm-wave frequencies
| Autor: | Marion K. Matters-Kammerer, Piyush Kaul, Alhassan Aljarosha, A.B. Smolders, Rob Maaskant |
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| Přispěvatelé: | Electromagnetics, Integrated Circuits, Center for Astronomical Instrumentation, Center for Care & Cure Technology Eindhoven, Center for Wireless Technology Eindhoven, RF, EM Antenna Systems Lab |
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Waveguide (electromagnetism)
Materials science Silicon business.industry 020208 electrical & electronic engineering chemistry.chemical_element 020206 networking & telecommunications 02 engineering and technology Substrate (electronics) Spatial power combiner Computer Science::Hardware Architecture chemistry Performance comparison 0202 electrical engineering electronic engineering information engineering Galvanic cell Optoelectronics Electromagnetic coupling Antenna (radio) business |
| Zdroj: | 2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, APSURSI 2019-Proceedings, 1081-1082 STARTPAGE=1081;ENDPAGE=1082;TITLE=2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, APSURSI 2019-Proceedings |
| DOI: | 10.1109/apusncursinrsm.2019.8888834 |
| Popis: | This paper presents a comparison between different silicon (Si) substrates used in Si-based IC technologies at E-Band (71–86 GHz). A unique low-loss and compact contactless transition from a silicon IC (p-doped substrate) to a metal waveguide is used. The proposed transition incorporates a spatial power combiner to enable direct electromagnetic coupling from an array of patches on the IC to a metal waveguide. This design enables a high-power transition from an IC to a waveguide and/or antenna at millimeter-wave (mm-wave) frequencies, where a galvanic contact between the two parts is avoided. |
| Databáze: | OpenAIRE |
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