Selective photoluminescence spectroscopy of shallow levels in wide band gap semiconductors
| Autor: | Bernard Beaumont, Robert Triboulet, Nicolas Grandjean, Philippe Lemasson, Gérard Neu, S. Porowski, Hacene Lahreche, M. Teisseire, Izabella Grzegory, Fabrice Semond |
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| Rok vydání: | 2001 |
| Předmět: |
III-V semiconductors
Materials science Photoluminescence Exciton ZINC SELENIDE DONORS exciton mediated interactions Molecular physics Condensed Matter::Materials Science Effective mass (solid-state physics) SI(111) SUBSTRATE Electrical and Electronic Engineering Spectroscopy LASER-DIODES Wurtzite crystal structure impurity and defect levels Condensed matter physics Doping SOLID-PHASE RECRYSTALLIZATION II-VI semiconductors Heterojunction OPTICAL-PROPERTIES OSCILLATOR-STRENGTHS Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electronic Optical and Magnetic Materials ZNSE Excited state photoluminescence SINGLE-CRYSTALS HIGH-PURITY |
| Zdroj: | Physica B: Condensed Matter. :39-53 |
| ISSN: | 0921-4526 |
| DOI: | 10.1016/s0921-4526(01)00403-3 |
| Popis: | We present an overview of recent selective photoluminescence (PL) experiments on shallow levels in ZnSe and GaN. Through two electron transitions (TET) and electronic Raman scattering (ERS) investigations on solid phase recrystallized bulk ZnSe doped with Al, Cl and In, the spectroscopic properties of donor impurities are re-examined. It is shown that the donor spectra previously attributed to Al and Cl are in fact due to common residual impurities. The Al-donor excited states are detected up to n = 6 allowing a very accurate determination of its ionization energy. We show that the central cell correction of Al is vanishing leading to a new evaluation of the Rydberg which is discussed in view of the last experimental determinations of the dielectric constant and electron effective mass. The neutral-donor bound-excitons have been studied in n-type wurtzite GaN homoepitaxial layers and heteroepitaxial layers deposited on sapphire or SiC substrates. It is demonstrated that the existence of strain distributions in heterostructures induces original resonant effects on selective photoluminescence spectra allowing to identify the bound exciton excited states on a large domain of tensile and compressive strains and in particular near the A and B valence band crossing. Finally, the donors are investigated by TET and ERS spectroscopy. (C) 2001 Elsevier Science B.V. All rights reserved. |
| Databáze: | OpenAIRE |
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