High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition
| Autor: | Abdullah I. Alhassan, Steven P. DenBaars, David J. Hwang, Shuji Nakamura, Ryan Ley, Matthew S. Wong, Changmin Lee |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Passivation business.industry 02 engineering and technology Chemical vapor deposition Nitride 021001 nanoscience & nanotechnology 01 natural sciences Atomic and Molecular Physics and Optics law.invention Atomic layer deposition Optics law Plasma-enhanced chemical vapor deposition 0103 physical sciences Optoelectronics Quantum efficiency Light emission 0210 nano-technology business Light-emitting diode |
| Zdroj: | Optics Express. 26:21324 |
| ISSN: | 1094-4087 |
| DOI: | 10.1364/oe.26.021324 |
| Popis: | Optoelectronic effects of sidewall passivation on micro-sized light-emitting diodes (µLEDs) using atomic-layer deposition (ALD) were investigated. Moreover, significant enhancements of the optical and electrical effects by using ALD were compared with conventional sidewall passivation method, namely plasma-enhanced chemical vapor deposition (PECVD). ALD yielded uniform light emission and the lowest amount of leakage current for all µLED sizes. The importance of sidewall passivation was also demonstrated by comparing leakage current and external quantum efficiency (EQE). The peak EQEs of 20 × 20 µm2 µLEDs with ALD sidewall passivation and without sidewall passivation were 33% and 24%, respectively. The results from ALD sidewall passivation revealed that the size-dependent influences on peak EQE can be minimized by proper sidewall treatment. |
| Databáze: | OpenAIRE |
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