Pd Assisted HF Etching of Si: Electrochemical Measurement

Autor:	Masayuki Tashiro, Naoki Fukumuro, Hitoshi Matsuda, Yuma Morii, Shinji Yae
Rok vydání:	2011
Předmět:	Thesaurus (information retrieval) Search engine Materials science Etching (microfabrication) Nanotechnology Electrochemistry Science technology and society
Zdroj:	ECS Transactions. 33:173-180
ISSN:	1938-6737 1938-5862
Popis:	Metal-assisted HF etching of Si has attracted considerable attention as a new electroless method that can produce porous Si by immersing metal-modified Si in a HF solution without bias. Such etching generally uses not only metal-modified Si but also an oxidizing agent. Palladium exhibits high activity in assisted etching under dissolved-oxygen-free and dark conditions. In this study, we investigate the Pd assisted HF etching of n-Si by electrochemical measurements. The potential of Pd metal on Si is more negative than the potential of hydrogen evolution at open circuit conditions. Anodic current generation of Pd-modified Si electrodes at positive bias and the localization of etching under Pd films at low thickness indicate that Pd catalyzes the anodic dissolution of Si and the cathodic hydrogen evolution.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc58606231ac20b62046f8c811c128a9 https://doi.org/10.1149/1.3553168 Zobrazit plný text záznamu