Carrier profiling in Si-implanted gallium nitride by Scanning Capacitance Microscopy
| Autor: | Mohamed Lamhamdi, Anne Elisabeth Bazin, Frédéric Cayrel, Emmanuel Collard, Daniel Alquier |
|---|---|
| Přispěvatelé: | GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) ( GREMAN - UMR 7347 ), Université de Tours-Institut National des Sciences Appliquées - Centre Val de Loire ( INSA CVL ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ), STMicroelectronics [Tours] ( ST-TOURS ), GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics [Tours] (ST-TOURS), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2012 |
| Předmět: |
Nuclear and High Energy Physics
Materials science Silicon Analytical chemistry chemistry.chemical_element Gallium nitride 02 engineering and technology Scanning capacitance microscopy 01 natural sciences Scanning Capacitance Microscopy chemistry.chemical_compound 0103 physical sciences Electronics [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Instrumentation Nanoscopic scale 010302 applied physics Dopant business.industry Profiling Doping 021001 nanoscience & nanotechnology Ion implantation chemistry Optoelectronics [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics 0210 nano-technology business |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2012, 275, pp.37-40. 〈10.1016/j.nimb.2011.12.003〉 Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2012, 275, pp.37-40. ⟨10.1016/j.nimb.2011.12.003⟩ |
| ISSN: | 0168-583X |
| DOI: | 10.1016/j.nimb.2011.12.003 |
| Popis: | International audience; To face silicon limits, gallium nitride (GaN) exhibits major interests for optoelectronics and power electronic devices. Nevertheless, several challenges have to be overcome, with local doping by ion implantation as a major one. It requires development of reliable characterization tools able to provide electrical information with nanoscale resolution. In this work, Atomic Force Microscopy (AFM) combined to its Scanning Capacitance Microscopy (SCM) mode was used for surface damages quantification and nanoscale dopant profiling. GaN samples have been implanted with Si in order to obtain a box-like profile and annealed above 1000 °C under nitrogen with AlN protective cap layer. SCM measurements have led to reliable and quantitative dopant electrical activity measurements thank to calibration sample. Moreover, a good agreement, in terms of depth and shape, has been obtained between SCM and SIMS profiles. This work has evidenced that a high activation rate of implanted Si can be achieved using rapid thermal annealing. |
| Databáze: | OpenAIRE |
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