| Autor: |
J.S Sharpe, M. A. Lourenço, T.M Butler, Russell M. Gwilliam, Yanmei Chen, K.J Reeson Kirkby, C.N McKinty, S. Ledain, Guosheng Shao, A.K Kewell, Kevin P. Homewood |
| Rok vydání: |
2000 |
| Předmět: |
|
| Zdroj: |
Scopus-Elsevier |
| ISSN: |
0168-583X |
| DOI: |
10.1016/s0168-583x(99)00961-1 |
| Popis: |
Ru2Si3 has been shown both theoretically and experimentally to be a direct gap semiconductor. In this paper we report the fabrication of orthorhombic Ru2Si3 by Ion Beam Synthesis (high dose ion implantation followed by high temperature anneal). This paper discusses the effects of implantation temperature and annealing temperature on the structural morphology of the samples. A dose of 5 × 1016 Ru+ cm−2 was implanted at around 250–300°C, with a subsequent sample implanted to the same dose at a temperature of 600°C. Transmission electron micrographs of the sample implanted at the lower temperature show the existence of a well defined amorphous layer extending from the surface to a depth of 9000 A, the upper portion of which contains small precipitates of Ru2Si3. After sequential annealing up to 1100°C the lower portion of this amorphous layer regrows as single crystal silicon, however when the regrowth front encounters the precipitates of Ru2Si3 it segments to give a polycrystalline structure. For the sample implanted at the higher temperature, no amorphisation is observed and the structure consists of discrete Ru2Si3 precipitates in a matrix of single crystal silicon. Annealing causes these precipitates to grow. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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