GaN/AlGaN Nanocolumn Ultraviolet Light-Emitting Diode Using Double-Layer Graphene as Substrate and Transparent Electrode
| Autor: | Bjørn-Ove Fimland, Katsumi Kishino, Lyubomir Ahtapodov, Andreas Liudi Mulyo, Ida Marie Høiaas, Dong Chul Kim, Helge Weman, Per Erik Vullum |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
Bioengineering 02 engineering and technology Substrate (electronics) medicine.disease_cause law.invention law semiconductor nanocolumn medicine Ultraviolet light UV optoelectronics General Materials Science Sheet resistance Diode electrical injection business.industry Graphene Mechanical Engineering LED graphene General Chemistry nitride-based devices 021001 nanoscience & nanotechnology Condensed Matter Physics Electrode Optoelectronics 0210 nano-technology business Ultraviolet Molecular beam epitaxy |
| Zdroj: | Nano letters |
| ISSN: | 1530-6992 1530-6984 |
| DOI: | 10.1021/acs.nanolett.8b04607 |
| Popis: | The many outstanding properties of graphene have impressed and intrigued scientists for the last few decades. Its transparency to light of all wavelengths combined with a low sheet resistance makes it a promising electrode material for novel optoelectronics. So far, no one has utilized graphene as both the substrate and transparent electrode of a functional optoelectronic device. Here, we demonstrate the use of double-layer graphene as a growth substrate and transparent conductive electrode for an ultraviolet light-emitting diode in a flip-chip configuration, where GaN/AlGaN nanocolumns are grown as the light-emitting structure using plasma-assisted molecular beam epitaxy. Although the sheet resistance is increased after nanocolumn growth compared with pristine double-layer graphene, our experiments show that the double-layer graphene functions adequately as an electrode. The GaN/AlGaN nanocolumns are found to exhibit a high crystal quality with no observable defects or stacking faults. Room-temperature electroluminescence measurements show a GaN related near bandgap emission peak at 365 nm and no defect-related yellow emission. |
| Databáze: | OpenAIRE |
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