Quantification of low levels of fluorine content in thin films
Autor: | Antonia Terriza, Germain Rey, Francisco J. Ferrer, J. Garcia-Lopez, Jorge Gil-Rostra, Carmen Jiménez, Francisco Yubero |
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Přispěvatelé: | Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Instituto de Ciencia de Materiales de Sevilla (ICMSE), Universidad de Sevilla-Consejo Superior de Investigaciones Científicas [Madrid] (CSIC) |
Jazyk: | angličtina |
Rok vydání: | 2012 |
Předmět: |
010302 applied physics
Nuclear and High Energy Physics Range (particle radiation) Materials science Proton Analytical chemistry chemistry.chemical_element 02 engineering and technology [CHIM.MATE]Chemical Sciences/Material chemistry 021001 nanoscience & nanotechnology Rutherford backscattering spectrometry Mass spectrometry 01 natural sciences Carbon film chemistry 0103 physical sciences Fluorine Thin film 0210 nano-technology Tin Instrumentation ComputingMilieux_MISCELLANEOUS |
Zdroj: | Nuclear Instruments and Methods in Physics Research Nuclear Instruments and Methods in Physics Research, Elsevier, 2012, 274, pp.4. ⟨10.1016/j.nimb.2011.11.042⟩ Digital.CSIC. Repositorio Institucional del CSIC instname |
ISSN: | 0168-583X 0167-5087 |
DOI: | 10.1016/j.nimb.2011.11.042⟩ |
Popis: | Fluorine quantification in thin film samples containing different amounts of fluorine atoms was accomplished by combining proton-Rutherford Backscattering Spectrometry (p-RBS) and proton induced gamma-ray emission (PIGE) using proton beams of 1550 and 2330 keV for p-RBS and PIGE measurements, respectively. The capabilities of the proposed quantification method are illustrated with examples of the analysis of a series of samples of fluorine-doped tin oxides, fluorinated silica, and fluorinated diamond-like carbon films. It is shown that this procedure allows the quantification of F contents as low as 1 at.% in thin films with thicknesses in the 100-400 nm range. © 2011 Elsevier B.V. All rights reserved. This work was funded by the Spanish Ministerio de Ciencia e Innovación (MAT2010-18447 and CONSOLIDER CPAN CSD2007-42 and CONSOLIDER FUNCOAT CSD2008-00023). |
Databáze: | OpenAIRE |
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