CMOS Scaling with III-V Channels for Improved Performance and Low Power

Autor:	Raj Jammy, Jungwoo Oh, Prashant Majhi, Richard Hill, Jeff Huang, Wei-Yip Loh, Paul Kirsch, Niti Goel, Joel Barnett, Chanro Park, J. Price
Rok vydání:	2011
Předmět:	Improved performance Materials science business.industry Electrical engineering business Cmos scaling Power (physics)
Zdroj:	ECS Transactions. 35:335-344
ISSN:	1938-6737 1938-5862
Popis:	The superior transport properties of III-V materials makes them attractive choices to enable improved performance at low power. This paper examines the module targets and challenges for III-V materials to be successfully integrated for high performance/low power logic at or beyond the 11 nm technology node. A VLSI compatible, self-aligned, III-V on 200mm Si MOSFET process flow is presented using an industry standard toolset. Statistically significant data shows that III-V devices can be processed on a Si line with controlled contamination, good uniformity and yield. The Lg = 500 nm device has a drive current of 471 µA/µm (Vgs = Vds = 1V) and intrinsic transconductance of 1005 µS/um.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb81bf88bddecf84cc87b6f8e2416b6e https://doi.org/10.1149/1.3569926 Zobrazit plný text záznamu