Electronic states in a graphene flake strained by a Gaussian bump
| Autor: | François M. Peeters, M. Ramezani Masir, Dean Moldovan |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Condensed Matter - Mesoscale and Nanoscale Physics Field (physics) Condensed matter physics Graphene Physics Gaussian FOS: Physical sciences Electron Landau quantization Condensed Matter Physics Symmetry (physics) Electronic Optical and Magnetic Materials law.invention symbols.namesake Condensed Matter::Materials Science Zigzag law Mesoscale and Nanoscale Physics (cond-mat.mes-hall) symbols Physics::Atomic and Molecular Clusters Vector potential |
| Zdroj: | Physical Review B |
| DOI: | 10.48550/arxiv.1307.5190 |
| Popis: | The effect of strain in graphene is usually modeled by a pseudomagnetic vector potential which is, however, derived in the limit of small strain. In realistic cases deviations are expected in view of graphene's very high strain tolerance, which can be up to 25%. Here we investigate the pseudomagnetic field generated by a Gaussian bump and we show that it exhibits significant differences with numerical tight-binding results. Furthermore, we calculate the electronic states in the strained region for a hexagon shaped flake with armchair edges. We find that the sixfold symmetry of the wave functions inside the Gaussian bump is directly related to the different effects of strain along the fundamental directions of graphene: zigzag and armchair. Low energy electrons are strongly confined in the armchair directions and are localized on the carbon atoms of a single sublattice. |
| Databáze: | OpenAIRE |
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