Conformal isolation of high-aspect-ratio TSVs using a low-kappa dielectric deposited by filament-assisted CVD
| Autor: | J. Faguet, C. Ribiere, B. Altemus, Stephane Minoret, C. Ratin, K. Ichiki, Vincent Jousseaume, Thierry Mourier, M. Gottardi |
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| Přispěvatelé: | Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), TEL Technology Center, America, LLC |
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Annealing (metallurgy) business.industry Low leakage Conformal map 02 engineering and technology Dielectric Chemical vapor deposition Dielectric thin films 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Protein filament [SPI]Engineering Sciences [physics] Optoelectronics Electrical and Electronic Engineering Thin film 0210 nano-technology business |
| Zdroj: | Microelectronic Engineering Microelectronic Engineering, Elsevier, 2017, 167, pp.80-84. ⟨10.1016/j.mee.2016.11.005⟩ Microelectronic Engineering, 2017, 167, pp.80-84. ⟨10.1016/j.mee.2016.11.005⟩ |
| ISSN: | 0167-9317 1873-5568 |
| DOI: | 10.1016/j.mee.2016.11.005⟩ |
| Popis: | In this study, SiOCH thin films were deposited by filament assisted chemical vapor deposition using methyltriethoxysilane. It is shown that annealing the films at 400°C (with or without UV-assist) is required to meet specifications in terms of dielectric properties (low-ź values and good insulating properties). This work highlights FACVD as a promising technique to allow the deposition of conformal dielectric thin films within High-Aspect-Ratio TSVs. Step coverage higher than 70% were obtained within 10ź80µm TSVs. Then, FACVD deposited SiOCH films can be considered as a promising candidate for use within TSV technologies. Display Omitted A filament assisted CVD (FACVD) method to isolate high-aspect-ratio TSV's is investigated.SiOCH thin films are deposited using MTES as precursor.Post-annealed films exhibit improved electrical characteristics such as low dielectric constant and low leakage current.Very high step coverages are obtained (i.e.70% for AR 8:1).FACVD deposited SiOCH films are promising candidates for use within TSV technologies. |
| Databáze: | OpenAIRE |
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