Smooth plasma etching of GeSn nanowires for gate-all-around field effect transistors
| Autor: | E. Eustache, Bassem Salem, M. A. Mahjoub, Youssouf Guerfi, Jean-Michel Hartmann, J. Aubin, S. David, Sébastien Labau, Franck Bassani |
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| Přispěvatelé: | Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA) |
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
Nanowire plasma etching 02 engineering and technology 01 natural sciences chemistry.chemical_compound X-ray photoelectron spectroscopy 0103 physical sciences Materials Chemistry XPS Electrical and Electronic Engineering Reactive-ion etching Semiconductor Science and Technology germanium-tin nanowire [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Anisotropy Hydrogen silsesquioxane 010302 applied physics Plasma etching business.industry germanium-tin nanowire GAA-FET 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Optoelectronics Field-effect transistor Inductively coupled plasma 0210 nano-technology business |
| Zdroj: | Semiconductor Science and Technology Semiconductor Science and Technology, 2021, 36 (6), pp.065018. ⟨10.1088/1361-6641/abfbb5⟩ Semiconductor Science and Technology, IOP Publishing, 2021, 36 (6), pp.065018. ⟨10.1088/1361-6641/abfbb5⟩ |
| ISSN: | 0268-1242 1361-6641 |
| DOI: | 10.1088/1361-6641/abfbb5⟩ |
| Popis: | We report on the nanopatterning of horizontal and vertical germanium-tin (Ge1−x Sn x or GeSn) nanowires by inductively coupled plasma reactive ion etching for gate-all-around field effect transistors. First, a chlorine based chemistry has been investigated and optimal conditions identified for GeSn 6% alloys. Then, plasma etching was optimized to etch high Sn content GeSn alloys (up to 15%) with a high anisotropy, smooth sidewalls and a high selectivity versus a hydrogen silsesquioxane hard mask. We have shown that, in order to obtain smooth surfaces after plasma etching, a HCl pre-treatment was mandatory to eliminate the native Sn and Ge oxides. This behavior was even more pronounced for high Sn contents. Finally, we succeeded in patterning 20 nm wide suspended beams from GeSn layers with Sn concentrations up to 15%. |
| Databáze: | OpenAIRE |
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