Autor: |
Abu Sebastian, Chunmeng Dou, A. K. Ott, C.D. Wright, A. M. Alexeev, Evangelos Eleftheriou, Matthias Wuttig, Andrea C. Ferrari, Siyuan Zhang, Oana Cojocaru-Mirédin, V. K. Nagareddy, Christina Scheu, Tobias Bachmann, Federico Zipoli, V. P. Jonnalagadda, Monica F. Craciun, Alessandro Curioni, W.W. Koelmans |
Jazyk: |
angličtina |
Rok vydání: |
2019 |
Předmět: |
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DOI: |
10.17863/cam.42272 |
Popis: |
Carbon-based nonvolatile resistive memories are an emerging technology. Switching endurance remains a challenge in carbon memories based on tetrahedral amorphous carbon (ta-C). One way to counter this is by oxygenation to increase the repeatability of reversible switching. Here, we overview the current status of carbon memories. We then present a comparative study of oxygen-free and oxygenated carbon-based memory devices, combining experiments and molecular dynamics (MD) simulations. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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