Silicon: A flexible material for bendable electronics and sensors

Autor: Yannick Kervran, Tayeb Mohammed-Brahim, Claude Simon, Khalid Kandoussi, Hanpeng Dong, Nathalie Coulon, Sabri Janfaoui, Emmanuel Jacques
Přispěvatelé: Institut d'Électronique et des Technologies du numéRique (IETR), Nantes Université (NU)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Université de Nantes (UN)-Université de Rennes 1 (UR1), Université de Nantes (UN)-Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)
Rok vydání: 2016
Předmět:
Zdroj: 31st Symposium on Microelectronics Technology and Devices, SBMicro 2016
31st Symposium on Microelectronics Technology and Devices, SBMicro 2016, Aug 2016, Horizonte, Brazil. ⟨10.1109/SBMicro.2016.7731313⟩
DOI: 10.1109/sbmicro.2016.7731313
Popis: International audience; Directly crystallized deposited silicon at low temperature is shown to be the right material when bendable system including treatment electronics and sensing functions is needed. This is true particularly when process reproducibility, electrical and mechanical reliability of the devices are the most important parameters implying the success of the technology. Indeed, these parameters are the main issues when we need to go beyond the publication of a paper, towards actual commercial application. Electrical and mechanical performances of microcrystalline silicon thin film transistors and deformation sensors on 25 μm thick flexible plastics under high bending, still 0.75 mm curvature radius, are presented. These devices are fabricated directly on this substrate at a maximum temperature of 180°C. © 2016 IEEE.
Databáze: OpenAIRE