Solutions processible organic transistors and circuits based on a C70 methanofullerene
Autor: | Thomas D. Anthopoulos, J Jan Alma, Patrick van ’t Hof, Eugenio Cantatore, Jan C. Hummelen, Dago M. de Leeuw |
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Přispěvatelé: | Integrated Circuits, Stratingh Institute of Chemistry, Molecular Energy Materials |
Jazyk: | angličtina |
Rok vydání: | 2005 |
Předmět: |
Electron mobility
Materials science FABRICATION General Physics and Astronomy RING OSCILLATORS law.invention INVERTERS law GeneralLiterature_REFERENCE(e.g. dictionaries encyclopedias glossaries) CONDUCTIVITY Electronic circuit POLYMER INTEGRATED-CIRCUITS Ambipolar diffusion business.industry Transistor HIGH-ELECTRON-MOBILITY Organic semiconductor Thin-film transistor Logic gate THIN-FILM TRANSISTORS Optoelectronics Field-effect transistor FIELD-EFFECT TRANSISTORS C-60 business ACTIVE-MATRIX DISPLAYS |
Zdroj: | Journal of Applied Physics, 98(5):054503, 054503-1/6. American Institute of Physics Journal of Applied Physics, 98(5):054503, 054503/1-054503/6. AMER INST PHYSICS |
ISSN: | 0021-8979 |
DOI: | 10.1063/1.2034083 |
Popis: | We demonstrate ambipolar charge transport in organic field-effect transistors based on the solution processible methanofullerene [6,6]-phenyl-C-71-butyric acid methyl ester ([70]PCBM). The electron mobility measured in the linear and saturated regimes is approximately equal and of the order of 1 X 10(-3) cm(2)/V s. In the linear regime, mobility is thermally activated with a strong gate bias dependence. The p-channel hole mobility is lower with a maximum value of 2 X 10(-5) cm(2)/V s. The n- and p-channel operations are characterized by a low (similar to vertical bar 3 vertical bar V) and a high (similar to vertical bar 50 vertical bar V) switch-on voltage, respectively, with the on-off current ratio on the order of 10(4) for both channels. Although the present findings are qualitatively similar to those reported previously for C-60-methanofullerene-based transistors, [70]PCBM devices are more stable and easier to reproduce. By making use of this property we are able to demonstrate functional unipolar and complementarylike logic circuits with promising operating characteristics. |
Databáze: | OpenAIRE |
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