Separation by bonding Si Islands (SBSI) for LSI applications
| Autor: | Hiroo Omi, Yasuo Takahashi, Tetsushi Sakai, Masao Sakuraba, Hiroyuki Ohri, Shinya Morita, Junichi Murota, Shun-ichiro Ohmi, Takashi Yamazaki |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Thermal oxidation
Materials science business.industry Mechanical Engineering fungi Oxide Silicon on insulator Chemical vapor deposition Condensed Matter Physics Buried oxide chemistry.chemical_compound chemistry Mechanics of Materials Transmission electron microscopy Etching (microfabrication) Optoelectronics General Materials Science business Layer (electronics) |
| Zdroj: | Materials Science in Semiconductor Processing. 8:59-63 |
| ISSN: | 1369-8001 |
| DOI: | 10.1016/j.mssp.2004.09.082 |
| Popis: | We propose and describe a novel method called separation by bonding Si islands (SBSI) that can be used to form silicon-on-insulator (SOI) and isolation regions simultaneously. The Si islands are formed by selectively etching the SiGe layer of Si/SiGe stacked layers grown by chemical vapor deposition (CVD). Thin oxide layers are formed at the surface of the Si islands and the Si substrate by using thermal oxidation, and the Si islands are bonded to the Si substrate with the oxide layers. We obtained a uniform SOI layer and a smooth interface between the SOI and buried oxide (BOX) layers. The thicknesses of the SOI and BOX layers observed with cross-sectional transmission electron microscopy (TEM) were 18.2 and 23.5 nm, respectively. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect